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Same model may have multiple batches, images only for reference.
TK34A10N1,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK34A10N1,S4X

Part No TK34A10N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 34A TO-220
Datasheet
TK34A10N1,S4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 17A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050475-TK34A10N1,S4X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK34A10N1,S4X CAD Model

Description

The Toshiba Semiconductor and Storage TK34A10N1,S4X is an N-channel MOSFET that belongs to the Discrete Semiconductor Products category.

  • Polarity: N-channel
  • Power Dissipation: 35W (Tc)
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.3188 $61.2752
10+ $12.5699 $125.6990
15+ $12.1772 $182.6580
20+ $11.7845 $235.6900
26+ $11.3918 $296.1868
34+ $10.2125 $347.2250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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