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TPC6102(T5L,A,F)

Part No TPC6102(T5L,A,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 219712-TPC6102(T5L,A,F)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6102(T5L,A,F) CAD Model

Description

The TPC6102(T5L,A,F) is a P-channel MOS field-effect transistor manufactured by Toshiba Semiconductor and Storage. The suffix (T5L, A, F) likely refers to specific variations in packaging, testing, or performance characteristics. This MOSFET is intended for switching applications requiring efficient operation and low on-resistance. It is suitable for power management and load switching scenarios.

Applications:

  • Load Switching: Controls power supply to various electronic loads.
  • Power Management Circuits: Used in power management systems for efficient switching.
  • DC-DC Converters: Integrates into DC-DC converters for voltage regulation and conversion.
  • Battery Management Systems (BMS): Can be implemented in battery management systems for charge/discharge control.
  • Portable Devices: Ideal for use in portable electronic devices requiring efficient power control.

Features:

  • P-Channel MOSFET: Employs a P-channel configuration.
  • Low On-Resistance (R<sub>DS(on)): Minimizes power loss during switching.
  • Fast Switching Speed: Provides rapid switching for efficient operation.
  • Surface Mount Package: Designed in a surface mount package for easy PCB assembly.
  • Low Gate Charge (Q<sub>g): Reduces power consumption during switching.
  • (T5L, A, F) Suffix: Indicates specific variations in packaging, testing or performance.

Benefits:

  • Improved Efficiency: Minimizes power loss due to low on-resistance.
  • Reduced Heat Generation: Low on-resistance reduces heat dissipation.
  • Compact Design: Surface mount package facilitates compact circuit designs.
  • Enhanced Switching Performance: Provides fast switching for optimal performance.
  • Lower Power Consumption: Low gate charge results in reduced power consumption.

Technical Specifications (Typical):

  • Drain-Source Voltage (V<sub>DS): -30V (Example - check datasheet for exact value)
  • Gate-Source Voltage (V<sub>GS): ±20V (Example - check datasheet for exact value)
  • Continuous Drain Current (I<sub>D): -2A (Example - check datasheet for exact value)
  • On-Resistance (R<sub>DS(on)): 0.15 Ω at V<sub>GS = -10V (Example - check datasheet for exact value)
  • Power Dissipation (P<sub>D): 1W (Example - check datasheet for exact value - depends on package and thermal conditions)
  • Operating Temperature Range: -55°C to +150°C (Example - check datasheet for exact value)

Note: Always refer to the official Toshiba Semiconductor and Storage datasheet for the TPC6102(T5L,A,F) to obtain the most accurate and up-to-date specifications and application information.

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