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TPCA8005-H(TE12L,Q)

Part No TPCA8005-H(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840877-TPCA8005-H(TE12L,Q)
Ultra Librarian 3D Model Ultra Librarian TPCA8005-H(TE12L,Q) CAD Model

Description

The TPCA8005-H(TE12L,Q) is an N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency power conversion applications where low on-resistance and fast switching are critical. The device is commonly used in DC-DC converters, load switches, and power management circuits.

Applications:

  • DC-DC converters
  • AC-DC adapters
  • Load switches
  • Power management circuits in portable devices (e.g., smartphones, tablets, laptops)
  • Motor control circuits

Features:

  • Low drain-source on-resistance (RDS(ON))
  • High-speed switching
  • Low gate charge (Qg)
  • Enhancement mode
  • Surface-mount package (SOP-8)
  • Halogen-free

Benefits:

  • Increased power efficiency due to minimized conduction losses from the low RDS(ON).
  • Reduced switching losses due to fast switching speeds.
  • Improved thermal performance.
  • Compact design enabled by the small SOP-8 package.
  • Compliance with environmental standards (halogen-free).

Additional Details:

The TPCA8005-H(TE12L,Q) utilizes a trench gate structure to achieve its low on-resistance and fast switching characteristics. The maximum drain-source voltage (VDSS) is typically 30V. The continuous drain current (ID) can be up to 12A, depending on the operating conditions and the thermal resistance of the application. The low gate charge (Qg) contributes to reduced switching losses and improved efficiency.

The 'H' in the part number indicates that the device is halogen-free. The '(TE12L,Q)' likely refers to specific tape and reel packaging options. Designers should consult the datasheet for detailed specifications, including RDS(ON) at different gate-source voltages (VGS), thermal resistance, and safe operating area, to ensure the device is suitable for their application.

This MOSFET is well-suited for battery-powered applications and other systems where energy efficiency is paramount. Its low RDS(ON) minimizes power dissipation, extending battery life and reducing the need for complex thermal management solutions. The fast switching speed also allows for the use of smaller and less expensive passive components in power supply designs.

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