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IRF9Z34PBF

Name: IRF9Z34PBF
Brand: Vishay
SKU: 160235
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF9Z34PBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 60V 18A TO-220AB
Datasheet	IRF9Z34PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	60V
Continuous Drain Current at 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	34nC @ 10V
Max Input Capacitance	1100pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	88W (Tc)
Maximum Rds On at Id,Vgs	140 mOhm @ 11A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	205333-IRF9Z34PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF9Z34PBF CAD Model

Description

The Vishay IRF9Z34PBF is a P-Channel MOSFET transistor, designed for use in discrete semiconductor products.

Maximum Power Dissipation: 88W (Tc)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Rds On at Id, Vgs: 140 mOhm @ 11A, 10V
Case/Package: TO-220AB
Dimensions: TO-220-3
Maximum Gate-Source Voltage: ±20V
Maximum Input Capacitance: 1100pF @ 25V
Component Status: active
Drive Voltage: 10V
Mounting: through-hole

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
125+	$0.4701	$58.7625
300+	$0.3858	$115.7400
465+	$0.3731	$173.4915
640+	$0.3615	$231.3600
830+	$0.3500	$290.5000
1,110+	$0.3130	$347.4300

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 555 pieces

MOQ: 125 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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