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IRFD110

Name: IRFD110
Brand: Vishay
SKU: 604870
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRFD110
Manufacturer	Vishay
Catalog	FETs - Single
Description	1A, 100V, 0.600 Ohm, N-Channel Power MOSFET \| MOSFET N-CH 100V 1A 4-DIP
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	1A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	540mOhm at 600mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	8.3nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	180pF at 25V
Power Dissipation (Maximum)	1.3W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Manufacturer Package	4-DIP
Manufacturer Pack Quantity	2,500
MSL Level	1 (Unlimited)
Win Source Part Number	1187558-IRFD110
Manufacturer Homepage	www.intersil.com/cda/home
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFD110 CAD Model

Alternative Products

Description

The IRFD110 is an N-channel MOSFET manufactured by Vishay Siliconix.

Drain-Source Voltage: 100V
Continuous Drain Current: 1A
Package: 4-DIP
RoHS Compliant: Yes
Popularity: medium popularity
Maximum Power Dissipation: 1.3W
Gate-Source Voltage: ±20V

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