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Same model may have multiple batches, images only for reference.
SI1472DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1472DH-T1-E3

Part No SI1472DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 15 V
Power Dissipation (Max) 1.5W (Ta), 2.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1472
Other Names SI1472DH-T1-E3CT,SI1472DH-T1-E3DKR,SI1472DHT1E3,SI1472DH-T1-E3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277554-SI1472DH-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1472DH-T1-E3 CAD Model

Description

The SI1472DH-T1-E3 MOSFET is a N-channel FET that features a drain to source voltage of 30 V, continuous drain current of 5.6A @ 25°C, and a maximum Rds On of 57mOhm @ 4.2A and 10V.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 5.6A @ 25°C
  • Maximum Rds On: 57mOhm @ 4.2A and 10V
  • Gate Charge: 11 nC @ 10 V
  • Input Capacitance: 380 pF @ 15 Vds
  • Package: 6-TSSOP, SC-88, SOT-363 package
  • Maximum Power Dissipation: 1.5W (Ta) and 2.8W (Tc)
  • Series: TrenchFET series
  • Operating Temperature Range: -55°C to 150°C (TJ)

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