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Same model may have multiple batches, images only for reference.
SI3915DV-T1-E3
Same model may have multiple batches, images only for reference.

SI3915DV-T1-E3

Part No SI3915DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual MOSFETs 12V 2.5A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 2 A
Drain to Source Breakdown Voltage -12 V
Drain to Source Resistance 120 mΩ
Element Configuration Dual
Fall Time 42 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 830 mW
Rise Time 42 ns
RoHS Compliant
Turn-Off Delay Time 33 ns
Win Source Part Number 1092832-SI3915DV-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3915DV-T1-E3 CAD Model

Description

The SI3915DV-T1-E3 is a dual element configuration MOSFET transistor that is designed for use in RF applications from Vishay.

  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Continuous Drain Current: 2 A
  • Drain to Source Breakdown Voltage: -12 V
  • Turn-Off Delay Time: 33 ns
  • Drain to Source Resistance: 120 mΩ
  • Rise Time and Fall Time: 42 ns
  • Package: TSOP
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 830 mW
  • RoHS: compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 540 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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