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Same model may have multiple batches, images only for reference.
SI4226DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4226DY-T1-GE3

Part No SI4226DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 8A 8-SOIC
Datasheet
SI4226DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 19.5 mOhm @ 7A, 4.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1255pF @ 15V
Maximum Power Dissipation 3.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095909-SI4226DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4226DY-T1-GE3 CAD Model

Description

The Vishay SI4226DY-T1-GE3 is a dual N-channel FET manufactured by Vishay.

  • Status: Obsolete
  • Maximum Power Dissipation: 3.2W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 8A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Rds On: 19.5 mOhm @ 7A, 4.5V

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