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Same model may have multiple batches, images only for reference.
SI4398DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4398DY-T1-GE3

Part No SI4398DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI4398DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5620 pF @ 10 V
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4398
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277901-SI4398DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4398DY-T1-GE3 CAD Model

Description

The SI4398DY-T1-GE3 is an N-Channel MOSFET (Metal Oxide) transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id): 19A (Ta)
  • Maximum On-State Resistance (Rds On): 2.8mOhm @ 25A and 10V
  • Gate Charge (Qg): 50 nC @ 4.5 V
  • Input Capacitance (Ciss): 5620 pF @ 10 Vds
  • Package: 8-SOIC (0.154", 3.90mm Width) package
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete product from Vishay Siliconix

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