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Same model may have multiple batches, images only for reference.
SI4539ADY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4539ADY-T1-GE3

Part No SI4539ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 4.4A 8-SOIC
Datasheet
SI4539ADY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.4A, 3.7A
Maximum Rds On at Id,Vgs 36 mOhm @ 5.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095964-SI4539ADY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4539ADY-T1-GE3 CAD Model

Description

The SI4539ADY-T1-GE3 is an N and P-channel FET IC with a logic level gate feature from Vishay.

  • Package: 8-SO
  • Packaging: reel-TR
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.4A, 3.7A
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On @ Id, Vgs: 36 mOhm @ 5.9A, 10V

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