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SI4565ADY-T1-E3

Part No SI4565ADY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 6.6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6.6A, 5.6A
Maximum Rds On at Id,Vgs 39 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 625pF @ 20V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 132854-SI4565ADY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4565ADY-T1-E3 CAD Model

Description

The Vishay SI4565ADY-T1-E3 is a dual N and P-channel FET that belongs to the category of discrete semiconductor products.

  • Supply and Demand Status: Limited
  • Function: Designed to switch and amplify signals in electronic circuits.
  • Suitable for: Use in a variety of applications such as power supplies, lighting, motor control, and audio amplifiers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8753 $61.2710
165+ $0.7182 $118.5030
250+ $0.6958 $173.9500
345+ $0.6734 $232.3230
445+ $0.6509 $289.6505
595+ $0.5835 $347.1825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,700 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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