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SI5905BDC-T1-GE3

Part No SI5905BDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 80mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 4V
Power - Max 3.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5905
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278461-SI5905BDC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5905BDC-T1-GE3 CAD Model

Description

The SI5905BDC-T1-GE3 is a discrete semiconductor product manufactured by Vishay Siliconix.

  • Series: TrenchFET™
  • Package: Tape and Reel
  • Standard Package: 3000
  • Mounting Type: SMD (SMT)
  • FET Type: 2 P-Channel (Dual)
  • Gate: Logic Level
  • Drain to Source Voltage (Vdss): 8V
  • Current Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Power max: 3.1W
  • Package/Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • MSL: 1 (Unlimited)
  • REACH: Unaffected
  • Status: Obsolete

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