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Same model may have multiple batches, images only for reference.
SI7431DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7431DP-T1-GE3

Part No SI7431DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel 200 V (D-S) MOSFET
Datasheet
SI7431DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type P
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 135nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs 174 mOhm @ 3.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 1249458-SI7431DP-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7431DP-T1-GE3 CAD Model

Description

The SI7431DP-T1-GE3 from Vishay is a TrenchFET MOSFET discrete semiconductor product.

  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4409 $58.4953
41+ $2.8233 $115.7553
64+ $2.7352 $175.0528
88+ $2.6470 $232.9360
113+ $2.5587 $289.1331
152+ $2.2940 $348.6880
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Availability: 42,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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