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SI7501DN-T1-E3

Name: SI7501DN-T1-E3
Brand: Vishay
SKU: 322761
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI7501DN-T1-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N/P-CH 30V 5.4A 1212-8
Datasheet	SI7501DN-T1-E3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Cut Reel
Status	Obsolete(EOL)
FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	5.4A, 4.5A
Maximum Rds On at Id,Vgs	35 mOhm @ 7.7A, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	14nC @ 10V
Maximum Power Dissipation	1.6W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK 1212-8 Dual
Win Source Part Number	028655-SI7501DN-T1-E3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SI7501DN-T1-E3 CAD Model

Alternative Products

Description

The Vishay SI7501DN-T1-E3 is a common-drain N and P-Channel FET featuring a logic-level gate.

Package: PowerPAK 1212-8 dual
Mounting: SMD (SMT)
Maximum Power Dissipation: 1.6W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.4A for N-Channel and 4.5A for P-Channel
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 14nC @ 10V
Maximum Rds On at Id,Vgs: 35 mOhm @ 7.7A, 10V
Temperature Range: -55°C to 150°C (TJ)

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