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Same model may have multiple batches, images only for reference.
SI8812DB-T2-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8812DB-T2-E1

Part No SI8812DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4MICROFOOT  /  N-Channel 20 V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Datasheet
SI8812DB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Vgs (Max) ±5V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-UFBGA
Base Product Number SI8812
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names SI8812DBT2E1,SI8812DB-T2-E1TR,SI8812DB-T2-E1DKR,SI8812DB-T2-E1CT
Standard Package 3,000
Win Source Part Number 1107364-SI8812DB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8812DB-T2-E1 CAD Model

Description

The SI8812DB-T2-E1 is a N-channel MOSFET transistor that is part of the TrenchFET® series.

  • Type: N-channel MOSFET transistor
  • Series: TrenchFET®
  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id): 2.3A (Ta)
  • Maximum Rds On: 59mOhm @ 1A, 4.5V
  • Package: 4-UFBGA
  • Supplied: Tape & reel
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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650+ $0.1780 $115.7000
1,005+ $0.1725 $173.3625
1,385+ $0.1669 $231.1565
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2,400+ $0.1446 $347.0400
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