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Same model may have multiple batches, images only for reference.
SI9948AEY-T1-GE3
Same model may have multiple batches, images only for reference.

SI9948AEY-T1-GE3

Part No SI9948AEY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 2.6 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 170 mΩ
Element Configuration Dual
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Power Dissipation 2.4 W
Resistance 170 mΩ
RoHS Non-Compliant
Win Source Part Number 1093020-SI9948AEY-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI9948AEY-T1-GE3 CAD Model

Description

The Vishay SI9948AEY-T1-GE3 is a high-performance and reliable transistor that is designed to meet the needs of various applications.

  • Manufacturer: Vishay
  • Resistance: 170 mΩ
  • Drain to Source Breakdown Voltage: 60V
  • Continuous Drain Current (ID): 2.6A
  • Power Dissipation: 2.4W
  • Maximum Operating Temperature: 175 °C
  • Minimum Operating Temperature: -55 °C

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,140 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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