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Same model may have multiple batches, images only for reference.
SIA439EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA439EDJ-T1-GE3

Part No SIA439EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 28A SC-70-6L
Datasheet
SIA439EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 69nC @ 8V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 5A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096370-SIA439EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA439EDJ-T1-GE3 CAD Model

Description

The 455099 is a P-Channel MOSFET manufactured by Vishay.

  • Power Dissipation (Max): 3.5W @ ambient temperature, 19W @ case temperature
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 28A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 69nC @ 8V
  • Maximum Rds On @ Id,Vgs: 16.5 mOhm @ 5A, 4.5V
  • Operating Temperature: -50°C to 150°C (TJ)
  • Package: PowerPAK SC-70-6 Single
  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V to 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7660 $58.8300
12+ $9.6546 $115.8552
19+ $9.3520 $177.6880
26+ $9.0506 $235.3156
34+ $8.7491 $297.4694
45+ $7.8436 $352.9620
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Availability: 944 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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