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SIE862DF-T1-GE3

Part No SIE862DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A POLARPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 3100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (U)
Dimension 10-PolarPAK (U)
Win Source Part Number 064635-SIE862DF-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIE862DF-T1-GE3 CAD Model

Description

Vishay is a popular manufacturer of electronic components. The 064635-SIE862DF-T1-GE3 is an obsolete (EOL) product from their range.

  • Product Status: Obsolete (EOL)
  • Maximum Power Dissipation (Ta): 5.2W
  • Maximum Power Dissipation (Tc): 104W
  • Operating Temperature Range (TJ): -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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