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SIHB065N60E-GE3

Part No SIHB065N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB065
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277742-SIHB065N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB065N60E-GE3 CAD Model

Description

The SIHB065N60E-GE3 is an N-Channel MOSFET transistor with a drain to source voltage of 600V and a maximum power dissipation of 250W at Tc.

  • Drain to Source Voltage: 600V
  • Maximum Power Dissipation: 250W @ Tc
  • Continuous Drain Current: 40A @ 25°C
  • Typical Rds On: 65mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Gate Charge: 74 nC @ 10V
  • Input Capacitance: 2700 pF @ 100V
  • Drive Voltage (max Rds On, min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.3135 $55.8810
14+ $7.6418 $106.9852
21+ $7.4030 $155.4630
28+ $7.1642 $200.5976
37+ $6.9254 $256.2398
49+ $6.2090 $304.2410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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