The Vishay Siliconix MOSFET with part number SIHB33N60ET1-GE3 is an N-channel FET that has a drain to source voltage (Vdss) of 600V.

• Drain to Source Voltage (Vdss): 600V
• Power Dissipation: 278W (Tc)
• Maximum Continuous Drain Current (Id): 33A (Tc) @ 25°C
• Gate Charge (Qg): 150nC @ 10V
• Input Capacitance (Ciss): 3508pF @ 100Vds
• Rds On (Maximum) @ Id, Vgs: 99mOhm @ 16.5A, 10V
• Vgs(th) (Maximum) @ Id: 4V @ 250μA
• Supplier Device Package: TO-263 (D2Pak)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Packaging: Reel
• Popularity: High
• Manufacturer Pack Quantity: 800
• MSL Level: 1 (Unlimited)