The SQ2308ES-T1-GE3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for low-voltage, high-speed switching applications. This MOSFET features a low on-resistance (RDS(on)) and a small footprint, making it suitable for power management and load switching in portable devices and other space-constrained applications.

Applications

• Load switching
• Power management in portable devices
• DC-DC converters
• Battery management systems
• Motor control

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• Fast switching speed
• Logic-level gate drive
• TrenchFET® Power MOSFET technology

Benefits

• Improved efficiency in power conversion
• Reduced power losses and heat generation
• Suitable for high-frequency operation
• Direct logic-level interface, simplifying circuit design
• Compact size for space-saving designs

Technical Specifications

The SQ2308ES-T1-GE3 has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 4.2A. The on-resistance (RDS(on)) is typically 28 mΩ at VGS = 10V and 40 mΩ at VGS = 4.5V. The gate charge (Qg) is typically 4.5 nC. The operating temperature range is -55°C to +150°C.

The MOSFET is housed in a PowerPAK® SC-70 package, which is a small surface-mount package designed for efficient heat dissipation. It is designed to be compatible with automated assembly processes and is RoHS compliant, ensuring adherence to environmental regulations regarding hazardous substances. The 'GE3' suffix indicates that the component is Halogen-Free according to IEC 61249-2-21 definition.