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SQP120N10-09_GE3

Part No SQP120N10-09_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220AB  /  N-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tube
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8645 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SQP120
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQP120N10-09_GE3TRINACTIVE,SQP120N10-09_GE3CT-ND,SQP120N10-09_GE3DKR-ND,SQP120N10-09_GE3CT,SQP120N10-09_GE3TR,SQP120N10-09_GE3DKR,SQP120N10-09_GE3DKRINACTIVE,SQP120N10-09_GE3TR-ND
Standard Package 500
Win Source Part Number 1024983-SQP120N10-09_GE3
Ultra Librarian 3D Model Ultra Librarian SQP120N10-09_GE3 CAD Model

Description

The N-channel MOSFET with the Win Source Part Number 1024983-SQP120N10-09_GE3 is from the TrenchFET series.

  • Series: TrenchFET
  • Application: Automotive, AEC-Q101
  • Drain to Source Voltage: 100V
  • Continuous Drain Current @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250μA
  • Power Dissipation @ Tc: 375W
  • Package: TO-220-3
  • Gate Charge @ 10V: 180nC
  • Input Capacitance @ 25V: 8645pF
  • Maximum Vgs: ±20V
  • Temperature Range: -55°C to 175°C (TJ)
  • Manufacturer: Vishay Siliconix

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