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AP80T10GP-HF

Part No AP80T10GP-HF
Manufacturer Advanced Power Electronics Corp.
Catalog Hard To Find
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Advanced Power Electronics Corp.
Win Source Part Number 1145982-AP80T10GP-HF
Manufacturer Homepage www.a-power.com.tw
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AP80T10GP-HF CAD Model

Description

The AP80T10GP-HF is an 80A, 100V N-channel power MOSFET from Advanced Power Electronics Corp (APEC). It's engineered for high-efficiency power switching with a focus on minimizing conduction losses and enhancing overall system performance.

Applications:

  • Synchronous Rectification in Power Supplies
  • DC-DC Converters for Industrial Use
  • AC-DC Power Supplies for Consumer Electronics
  • Motor Control in Robotics and Automation
  • Battery Management Systems

Features:

  • Ultra-Low On-Resistance: Minimizes power loss and maximizes efficiency.
  • High Avalanche Capability: Ensures robustness and reliability under transient conditions.
  • Fast Switching Speed: Reduces switching losses in high-frequency applications.
  • 100% UIS Tested: Guarantees avalanche ruggedness.
  • RoHS Compliant and Halogen-Free: Meets environmental standards.

Benefits:

  • Higher Efficiency: Lower on-resistance directly translates to reduced power dissipation and improved efficiency.
  • Improved Thermal Management: Reduced power dissipation leads to lower operating temperatures and better thermal performance.
  • Increased Reliability: Robust design and high avalanche capability contribute to enhanced reliability and longer lifespan.
  • Smaller System Size: High-frequency operation enables the use of smaller passive components, reducing system size and cost.
  • Environmentally Friendly: RoHS compliance ensures that the device meets environmental regulations.

Additional Details:

The AP80T10GP-HF utilizes advanced trench MOSFET technology to achieve a superior balance of low on-resistance and gate charge. It is designed for applications requiring high current handling capability and efficient power conversion. The device is commonly available in a TO-220 package.

Technical Specifications:

  • Voltage Rating: 100V
  • Continuous Drain Current: 80A
  • On-Resistance (RDS(on)): Typically 7.0 mΩ at VGS = 10V
  • Gate Charge (Qg): Typically 50 nC
  • Operating Temperature Range: -55°C to +175°C
  • Package Type: TO-220

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