Applications

• DC-DC Converters
• Power Management in Portable Devices
• Motor Control Circuits
• Load Switching
• Battery Management Systems

Features

• N-Channel Enhancement Mode
• Low On-Resistance (RDS(ON))
• Fast Switching Speed
• High Avalanche Energy
• Lead Free and RoHS Compliant

Benefits

• Improved Power Efficiency: Lower RDS(ON) minimizes conduction losses.
• Reduced Switching Losses: Fast switching speed enhances efficiency in high-frequency applications.
• Enhanced Reliability: High avalanche energy capability provides robust protection against voltage transients.
• Environmentally Friendly: Lead-free and RoHS compliant, reducing environmental impact.
• Compact Design: Allows for smaller and more efficient power supply designs.

Technical Specifications

• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 14A (at VGS=10V)
• RDS(ON) (at VGS=10V): 8 mΩ (typical)
• Total Gate Charge (Qg): 15 nC (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: SOP-8

The AP9980M MOSFET provides efficient power switching, making it ideal for various applications requiring high performance and reliability. Its low on-resistance and fast switching speed contribute to overall system efficiency and reduced power losses.