The APT20M20B2FLL is a high-performance, 200V, 20A Power MOSFET designed for demanding RF applications. Manufactured by Advanced Power Technology, this device leverages advanced silicon technology to deliver exceptional power gain, ruggedness, and efficiency at high frequencies.

Applications:

• RF Amplifiers
• High-Frequency Switching Power Supplies
• Industrial Heating and Welding Equipment
• Medical RF Devices
• ISM Band Applications

Features:

• High Breakdown Voltage: 200V breakdown voltage ensures reliable operation in high-voltage applications.
• Low Input Capacitance: Minimizes gate drive requirements and enhances switching speed.
• Fast Switching Speed: Reduces switching losses and improves overall efficiency.
• High Power Gain: Delivers significant power amplification for RF applications.
• Rugged Design: Withstands high voltage and current stress, ensuring reliable performance in harsh environments.
• Low On-Resistance (RDS(on)): Minimizes conduction losses and maximizes efficiency.

Benefits:

• Improved Efficiency: Low on-resistance and fast switching speeds contribute to higher overall efficiency in power conversion systems.
• Increased Power Density: High power gain allows for smaller and more compact amplifier designs.
• Enhanced Reliability: Rugged design and high breakdown voltage ensure reliable operation in demanding applications.
• Simplified Design: Low input capacitance simplifies gate drive circuitry.
• Reduced Cooling Requirements: High efficiency minimizes heat generation, reducing the need for extensive cooling.

The APT20M20B2FLL is an excellent choice for designers seeking a high-performance, reliable, and efficient Power MOSFET for RF applications. Its advanced features and robust design make it well-suited for a wide range of demanding applications.

Technical Specifications:

Voltage: 200V

Current: 20A

RDS(on): (Specific value to be obtained from datasheet)

Package: (Specific package type to be obtained from datasheet)