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Same model may have multiple batches, images only for reference.
AO4446 Real Image
Same model may have multiple batches, images only for reference.

AO4446

Part No AO4446
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8SOIC
Datasheet
AO4446 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 180370-AO4446
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AO4446 CAD Model

Description

AO4446 Description

The AO4446 N-channel MOSFET is tailored for applications necessitating high-speed performance and low power loss. Its compact yet powerful design supports versatile use in advanced electronic systems.

Features and Benefits

  • Fast Switching: Supports superior overall system efficiency.
  • Low On-Resistance: Minimizes power loss, enhancing system performance.
  • Reliable Performance: Engineered for consistent operation in demanding applications.

Applications and Projects

  • Telecommunication Equipment
  • Network Systems
  • Switching Applications

Optimize your electronic solutions with the AO4446 for an efficient and reliable performance tailored to modern technological needs.

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