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AOI2610

Part No AOI2610
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A/46A TO251A
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2007 pF @ 30 V
Power Dissipation (Max) 2.5W (Ta), 71.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251A
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number AOI261
Standard Package 70 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 744360-AOI2610
Ultra Librarian 3D Model Ultra Librarian AOI2610 CAD Model

Description

The 744360-AOI2610 is a N-channel MOSFET designed for discrete semiconductor applications.

  • Channel Type: N-channel
  • Applications: discrete semiconductor
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C (Ta): 10A
  • Continuous Drain Current (Id) @ 25°C (Tc): 46A
  • Rds On (Max) @ 20A, 10V: 10.7mOhm
  • Power Dissipation @ 25°C (Ta): 2.5W
  • Power Dissipation @ 25°C (Tc): 71.5W
  • Mounting Type: Through Hole
  • Package: TO-251-3 Stub Leads, IPak
  • Gate Charge (Qg) @ 10V: 30 nC
  • Input Capacitance (Ciss) @ 30V: 2007 pF
  • Operating Temperature: -55°C to 175°C (TJ)
  • Product Status: Active
  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Drive Voltage (Max Rds On): 4.5V
  • Drive Voltage (Min Rds On): 10V

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