The Alpha IGBT™ 1045138-AOK30B65M2 is a high-performance insulated gate bipolar transistor designed for use in a variety of applications, including power supplies, motor drives, and welding equipment. With a maximum power rating of 300 W and a collector-emitter breakdown voltage of 650 V, this IGBT is capable of handling high power loads with ease. The reverse recovery time of 339 ns ensures fast and efficient switching, while the gate charge of 63 nC and the switching energy of 1.02 mJ (on) and 410 μJ (off) make it easy to control. The TO-247-3 package provides through-hole mounting and is designed to operate over a wide temperature range of -55°C to 175°C (TJ). This IGBT is also available in alternate parts including NGTB30N65IHL2WG, STGWA30M65DF2, FGH30T65UPDT-F155, IRGP4740DPBF, and IRGP4262DPBF.