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AOT282L

Part No AOT282L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 18.5A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 18.5A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 178nC @ 10V
Max Input Capacitance 7765pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 272.5W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017203-AOT282L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOT282L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOT282L is an N-Channel MOSFET that is designed to provide optimal performance.

  • Power Dissipation: 2.1W (Ta), 272.5W (Tc)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 18.5A (Ta), 105A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Maximum Gate Charge: 178nC @ 10V
  • Maximum Input Capacitance: 7765pF @ 40V
  • Maximum Rds On: 3.5 mOhm @ 20A, 10V
  • Status: Active
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4530 $50.8550
85+ $1.1923 $101.3455
130+ $1.1550 $150.1500
180+ $1.1177 $201.1860
235+ $1.0805 $253.9175
310+ $0.9687 $300.2970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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