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Same model may have multiple batches, images only for reference.
AOT4S60L Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOT4S60L

Part No AOT4S60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO220
Datasheet
AOT4S60L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 263pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017225-AOT4S60L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOT4S60L CAD Model

Description

The Alpha & Omega Semiconductor AOT4S60L is a N-Channel MOSFET with a drain-source breakdown voltage of 600V and continuous drain current of 4A @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Rds On @ Id, Vgs: 900 mOhm @ 2A, 10V
  • Power Dissipation: 83W (Tc)
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 263pF @ 100V
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Application: power supplies, motor control, and lighting
  • Alternative Parts: STP8NM60D, TSM7N65CZ C0, IRFB9N65A

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