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ADL8107ACPZN

Part No ADL8107ACPZN
Manufacturer Analog Devices Inc.
Catalog OEM Souring
Description GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
Sample
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ECAD Module
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Products specifications Report Issue?

Category OEM Souring
Win Source Part Number 1464539-ADL8107ACPZN
Manufacturer Analog Devices Inc.
Package Strip
Product Status Active
Frequency 6GHz ~ 18GHz
P1dB 17dBm
Gain 20.5dB
Noise Figure 1.7dB
RF Type Radar
Voltage - Supply 3V ~ 5.5V
Current - Supply 90mA
Test Frequency 16GHz ~ 18GHz
Grade -
Mounting Type Surface Mount
Package / Case 8-VFDFN Exposed Pad, CSP
Supplier Device Package 8-LFCSP (2x2)
Ultra Librarian 3D Model Ultra Librarian ADL8107ACPZN CAD Model

Description

The ADL8107ACPZN is a state-of-the-art low noise amplifier (LNA) suitable for operation across a wide frequency range from 6 GHz to 18 GHz, making it an ideal choice for demanding applications in the fields of aerospace, defense, and telecommunications. This Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) MMIC (Monolithic Microwave Integrated Circuit) LNA is designed to provide excellent noise performance and high gain while maintaining a low power consumption profile. The wide bandwidth allows it to be used in a variety of systems including radar, electronic warfare, microwave radio, and satellite communications, where performance and reliability are paramount. The ADL8107ACPZN also features a compact package, making it suitable for systems where space is at a premium. With its high performance and flexibility, this LNA from Analog Devices stands out as a premium solution for designers looking to push the boundaries of what's possible in high-frequency signal amplification.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $145.5224 $145.5224
2+ $140.6717 $281.3434
3+ $126.1195 $378.3585
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