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Same model may have multiple batches, images only for reference.
BDV65C-S Bourns Inc.
Same model may have multiple batches, images only for reference.

BDV65C-S

Part No BDV65C-S
Manufacturer Bourns Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 120V 12A / Trans Darlington NPN 120V 12A 125000mW 3-Pin(3+Tab) SOT-93
Datasheet
BDV65C-S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Bourns Inc.
Packaging Tube
Part Status Obsolete(EOL)
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 12A
Voltage - Collector Emitter Breakdown (Maximum) 120V
Vce Saturation (Maximum) @ Ib, Ic 2V @ 20mA, 5A
Current - Collector Cutoff (Maximum) 2mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 1000 @ 5A, 4V
Power - Max 3.5W
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-218-3
Manufacturer Package SOT-93
Win Source Part Number 769942-BDV65C-S
Popularity Medium
Supply and Demand Status Limited
Family Name BDV65C
Introduction Date May 23, 1993
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BDV65C-S CAD Model

Description

The BDV65C-S is a bipolar NPN Darlington transistor with a maximum power of 3.5W and a maximum collector-emitter breakdown voltage of 120V.

  • Category: Discrete Semiconductor Products
  • Package: TO-218-3
  • Operating Temperature Range: -65°C to 150°C
  • Maximum Collector Current: 12A
  • DC Current Gain: 1000 @ 5A, 4V
  • Manufacturer: Bourns Inc.
  • Series: BDV65C
  • Alternative Parts: Mospec's BDV65B, ON Semiconductor's BDV65BG, TIP142
  • ECCN: EAR99
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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