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Same model may have multiple batches, images only for reference.
AT-42035G AVAGO TECHNOLOGIES LIMITED
Same model may have multiple batches, images only for reference.

AT-42035G

Part No AT-42035G
Manufacturer Broadcom Limited
Catalog RF Transistors (BJT)
Description RF TRANS NPN 12V 8GHZ 35 MICRO X
Datasheet
AT-42035G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Broadcom Limited
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 2GHz ~ 4GHz
Gain 10dB ~ 13.5dB
Power - Max 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 35mA, 8V
Current - Collector (Ic) (Max) 80mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD (35 micro-X)
Supplier Device Package 35 micro-X
Standard Package 100 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 565745-AT-42035G
Ultra Librarian 3D Model Ultra Librarian AT-42035G CAD Model

Description

The AT-42035G is a bipolar RF transistor designed for discrete semiconductor applications.

  • Series: AT
  • Manufacturer: Broadcom Limited
  • Package: Bulk
  • Standard Package Quantity: 100 pcs
  • Maximum Power Rating: 600mW
  • Maximum Collector-Emitter Breakdown Voltage: 12V
  • Gain Range: 10dB to 13.5dB
  • Mounting Type: Surface Mountable
  • Package: 4-SMD (35 micro-X)

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