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NE97733-T1B-A

Part No NE97733-T1B-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR NPN SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8.5GHz
Noise Figure (dB Typ @ f) 1.5dB @ 1GHz
Gain 12dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 20 @ 20mA, 8V
Maximum Current Collector 50mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 1082940-NE97733-T1B-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE97733-T1B-A CAD Model

Description

The CEL NE97733-T1B-A is a PNP transistor with a maximum collector-emitter breakdown voltage of 12V and a gain of 12dB.

  • Frequency Transition: 8.5GHz
  • Noise Figure @ 1GHz: 1.5dB
  • Supply and Demand Status: balanced
  • Status: obsolete (EOL)

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