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Same model may have multiple batches, images only for reference.
NESG2101M05 CEL
Same model may have multiple batches, images only for reference.

NESG2101M05

Part No NESG2101M05
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANS NPN 2GHZ M05
Datasheet
NESG2101M05 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Bulk
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 5V
Frequency - Transition 17GHz
Noise Figure (dB Typ @ f) 0.6dB to 1.2dB @ 1GHz to 2GHz
Gain 11dB to 19dB
Maximum Power Dissipation 500mW
Typical Gain (hFE) (Min) 130 @ 15mA, 2V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package M05
Win Source Part Number 252173-NESG2101M05
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NESG2101M05 CAD Model

Description

The NESG2101M05 is a discrete semiconductor product manufactured by CEL.

  • Transistor Type: NPN
  • Gain: 11dB to 19dB
  • Frequency Transition: 17GHz
  • Noise Figure (dB Typ @ f): 0.6dB to 1.2dB @ 1GHz to 2GHz
  • Suitable for: Use in various electronic devices that require discrete semiconductor components

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1,550+ $0.2241 $347.3550
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Availability: 30,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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