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CEU04N65

Part No CEU04N65
Manufacturer Chino-Excel
Catalog END - OF - LIFE
Description N-Channel Enhancement Mode Field Effect Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Chino-Excel
Win Source Part Number 1161297-CEU04N65
Manufacturer Homepage www.cetsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CEU04N65 CAD Model

Description

The CEU04N65 is an N-Channel enhancement mode power MOSFET from Chino-Excel. It's designed for high voltage, high-efficiency switching applications. Its characteristics make it ideal for applications needing efficient power conversion and management. Given that it is an end-of-life (EOL) product, alternative parts should be considered for new designs. This MOSFET aims to offer a good balance between on-resistance and gate charge, making it useful for various power tasks.

Applications:

  • Power Supplies: Designed for use in switched-mode power supplies (SMPS) for power conversion.
  • Inverters: Can be used in inverters for converting DC to AC power.
  • Motor Control: Driving and controlling DC motors.
  • Lighting Systems: Efficient power management in LED lighting systems.

Features:

  • N-Channel MOSFET: Suitable for low-side switching.
  • Enhancement Mode: Requires a gate-source voltage to turn on.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
  • Fast Switching Speed: Enables efficient high-frequency operation.

Benefits:

  • Increased Efficiency: Low RDS(on) minimizes power dissipation.
  • Simplified Design: N-Channel configuration simplifies implementation.
  • Reduced Heat Generation: Efficient switching minimizes heat, improving reliability.
  • Compact Design: Surface-mount packages facilitate miniaturization.

The CEU04N65 is typically available in surface-mount packages such as TO-252, facilitating automated assembly. Specific electrical characteristics, such as drain-source voltage (VDS) rating, gate-source voltage (VGS) rating, continuous drain current (ID) rating, and RDS(on) value at specific gate voltages, can be found in the datasheet. Given its EOL status, designers should evaluate replacements. It is useful for high-voltage power conversion and efficient power management.

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