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CMS80N06D-HF

Part No CMS80N06D-HF
Manufacturer Comchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 14A/80A DPAK  /  N-Channel 60 V 14A (Ta), 80A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount D-PAK (TO-252)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Comchip Technology
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4871 pF @ 30 V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number CMS80
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 641-CMS80N06D-HFTR
Standard Package 2,500
Win Source Part Number 1119329-CMS80N06D-HF
Ultra Librarian 3D Model Ultra Librarian CMS80N06D-HF CAD Model

Description

The 1119329-CMS80N06D-HF is an N-Channel MOSFET type that has a maximum drain to source voltage of 60V and a continuous drain current of 14A (Ta) and 80A (Tc) @ 25°C.

  • Maximum Drain to Source Voltage: 60V
  • Continuous Drain Current: 14A (Ta) and 80A (Tc) @ 25°C
  • Maximum Rds On: 7mOhm @ 20A, 10V
  • Gate Threshold Voltage: 4V @ 250μA
  • Power Dissipation: 2.5W (Ta) and 83W (Tc)
  • Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate Charge (Qg): 118 nC @ 10V
  • Input Capacitance (Ciss): 4871 pF @ 30V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supplier: Comchip Technology
  • Status: Obsolete

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