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NTTFS5D9N08HTWG

Part No NTTFS5D9N08HTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 13A/84A 8PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 40 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number NTTFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1379379-NTTFS5D9N08HTWG
Ultra Librarian 3D Model Ultra Librarian NTTFS5D9N08HTWG CAD Model

Description

ON Semiconductor NTTFS5D9N08HTWG Overview

The NTTFS5D9N08HTWG is a cutting-edge MOSFET product from ON Semiconductor, designed to cater to a wide range of power management applications. This high-efficiency, N-channel MOSFET is part of ON Semiconductor's portfolio of power solutions that aim to provide energy-efficient and cost-effective options for modern electronic systems.

Key Features

  • Advanced Technology: The device is built using ON Semiconductor's proprietary Trench Field Stop II technology, which enhances its performance by reducing on-resistance and minimizing gate charge.
  • High Current Capacity: With a continuous drain current (ID) rating of 100A, the NTTFS5D9N08HTWG is capable of handling high current loads, making it suitable for demanding applications.
  • Low On-Resistance: The MOSFET boasts an exceptionally low typical on-resistance (RDS(on)) of 2.8 mOhms at VGS = 10V, ensuring efficient power conversion with minimal losses.
  • High-Temperature Operation: It is designed to operate reliably over a wide temperature range, with a maximum junction temperature (Tj) of 150°C, which is ideal for high-temperature environments.
  • Power-Saving: The device's low gate charge (Qg) contributes to reduced switching losses, which in turn leads to better power efficiency and conservation in the end application.
  • Compact Footprint: Enclosed in a compact 5x6 mm package, the NTTFS5D9N08HTWG saves valuable board space without compromising on power handling capabilities.

Applications

The NTTFS5D9N08HTWG is versatile and can be utilized in a variety of applications. Some of these include:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Units (PSUs)
  • Computing and Server Systems
  • Automotive Applications
  • Telecommunication Equipment

With its robust design and superior electrical characteristics, the NTTFS5D9N08HTWG from ON Semiconductor is an excellent choice for designers looking to enhance efficiency, reduce power losses, and save space in their power management systems. Its reliability and performance make it a go-to component for a multitude of power-related applications.

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