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Same model may have multiple batches, images only for reference.
SI4426DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4426DY-T1-GE3

Part No SI4426DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI4426DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±12V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4426
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277523-SI4426DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4426DY-T1-GE3 CAD Model

Description

The SI4426DY-T1-GE3 is a N-channel MOSFET from Vishay Siliconix that is ideal for use in various electronic applications.

  • Maximum Drain to Source Voltage: 20V
  • Continuous Drain Current: 6.5A @ 25°C
  • Maximum On-Resistance: 25mΩ @ 8.5A and 4.5V
  • Gate Threshold Voltage: 1.4V @ 250μA
  • Maximum Power Dissipation: 1.5W @ 25°C
  • Package: 8-SOIC
  • Packaging: Tape and Reel (TR)
  • Gate Charge: 50nC @ 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Operating Temperature Range: -55°C to 150°C
  • Product Status: Obsolete

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