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Same model may have multiple batches, images only for reference.
IRLR3410CPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3410CPBF

Part No IRLR3410CPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 800pF @ 25V
Maximum Rds On at Id,Vgs 105 mOhm @ 10A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047602-IRLR3410CPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3410CPBF CAD Model

Description

The Infineon Technologies IRLR3410CPBF is an N-Channel MOSFET that is part of the Discrete Semiconductor Products category. Infineon Technologies IRLR3410CPBF

  • Polarity: N-Channel
  • Category: Discrete Semiconductor Products
  • Packaging: D-Pak
  • Mounting Type: SMD (SMT)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 17A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 34nC @ 5V
  • Maximum Input Capacitance: 800pF @ 25V
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 10A, 10V

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