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Same model may have multiple batches, images only for reference.
FQD4N20LTM Real Image
Same model may have multiple batches, images only for reference.

FQD4N20LTM

Part No FQD4N20LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.2A DPAK
Datasheet
FQD4N20LTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 5.2nC @ 5V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 1.35 Ohm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039745-FQD4N20LTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD4N20LTM CAD Model

Description

The Fairchild/ON Semiconductor FQD4N20LTM is a MOSFET transistor.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Power Dissipation: 2.5W (Ta), 30W (Tc)
  • Continuous Drain Current @ 25°C: 3.2A (Tc)
  • Supply and Demand Status: Balanced

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