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Same model may have multiple batches, images only for reference.
HER308GT-G
Same model may have multiple batches, images only for reference.

HER308GT-G

Part No HER308GT-G
Manufacturer Comchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 1KV 3A DO201AA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Comchip Technology
Packaging AMMO PACKAGE
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1000V (1kV)
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A
Speed(Frequency) Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 75ns
Current - Reverse Leakage @ Vr 5μA @ 1000V
Mounting Through Hole
Case / Package DO-27
Operating Temperature - Junction -55°C to 150°C
Win Source Part Number 142373-HER308GT-G
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Defence, Military & Aerospace
Quantity per package 1,200
Ultra Librarian 3D Model Ultra Librarian HER308GT-G CAD Model

Description

The HER308GT-G is a through-hole diode designed for use in power management, defence, military and aerospace applications.

  • Reverse Voltage: 1000V
  • Average Rectified Current: 3A
  • Forward Voltage: 1.7V at 3A
  • Reverse Recovery Time: 75ns
  • Package: DO-27
  • Temperature Range: -55°C to 150°C
  • Type: Fast-recovery diode
  • Popularity: Medium
  • Supply and Demand Status: Limited

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