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C3M0016120K

Part No C3M0016120K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1.2KV 115A TO247-4 / N-Channel 1200 V 115A (Tc) 556W (Tc) Through Hole TO-247-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id 3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 6085 pF @ 1000 V
Power Dissipation (Max) 556W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-4L
Case / Package TO-247-4
Base Product Number C3M0016120
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -3312-C3M0016120K,1697-C3M0016120K
Standard Package 30
Win Source Part Number 1324551-C3M0016120K
Ultra Librarian 3D Model Ultra Librarian C3M0016120K CAD Model

Description

Wolfspeed, Inc.'s 1324551-C3M0016120K is a Silicon Carbide FET type N-channel transistor with a drain to source voltage (Vdss) of 1200V.

  • Continuous Drain Current (Id): 115A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 22.3mOhm @ 75A and 15V
  • Maximum Gate-Source Voltage (Vgs): +15V and -4V
  • Drive Voltage: 15V
  • Maximum Frequency: 230MHz
  • Supplier Device Package: TO-247-4L
  • Maximum Power Dissipation: 556W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $58.1809 $58.1809
3+ $47.7382 $143.2146
4+ $46.2464 $184.9856
5+ $44.7545 $223.7725
6+ $43.2627 $259.5762
8+ $38.7873 $310.2984
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,720 pieces
Order Increment : 1 pcs
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