C3M0016120K

Part No C3M0016120K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1.2KV 115A TO247-4 / N-Channel 1200 V 115A (Tc) 556W (Tc) Through Hole TO-247-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id 3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 6085 pF @ 1000 V
Power Dissipation (Max) 556W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-4L
Case / Package TO-247-4
Base Product Number C3M0016120
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -3312-C3M0016120K,1697-C3M0016120K
Standard Package 30
Win Source Part Number 1324551-C3M0016120K

Description

Wolfspeed, Inc.'s 1324551-C3M0016120K is a Silicon Carbide FET type N-channel transistor with a drain to source voltage (Vdss) of 1200V and a continuous drain current (Id) of 115A (Tc) at 25°C. The component has a maximum on-resistance (Rds On) of 22.3mOhm at 75A and 15V. It has a maximum gate-source voltage (Vgs) of +15V and -4V. The product is suitable for applications that require a drive voltage of 15V and a maximum frequency of 230MHz. It is available in a TO-247-4L supplier device package and has a maximum power dissipation of 556W (Tc).

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
1+ $51.7426 $51.7426
3+ $48.4044 $145.2132
4+ $46.7353 $186.9412
5+ $43.3971 $216.9855
6+ $41.7280 $250.3680
8+ $40.0588 $320.4704
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 1,300 pieces
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