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SUD50P10-43L-E3

Part No SUD50P10-43L-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 37.1A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 37.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 4600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.3W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs 43 mOhm @ 9.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031617-SUD50P10-43L-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50P10-43L-E3 CAD Model

Description

The Vishay MOSFET is a P-channel power MOSFET that can handle a maximum power dissipation of 8.3W (Ta), 136W (Tc).

  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 37.1A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 160nC @ 10V
  • Maximum Rds On: 43 mOhm @ 9.2A, 10V
  • Package: TO-252, (D-Pak) package

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5293 $53.5255
80+ $1.2548 $100.3840
125+ $1.2156 $151.9500
175+ $1.1764 $205.8700
220+ $1.1372 $250.1840
295+ $1.0196 $300.7820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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