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Same model may have multiple batches, images only for reference.
CMF20120D Cree Inc.
Same model may have multiple batches, images only for reference.

CMF20120D

Part No CMF20120D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 42A TO247-3
Datasheet
CMF20120D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Cree/Wolfspeed
Series Z-FET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 90.8 nC @ 20 V
Vgs (Max) +25V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1915 pF @ 800 V
Power Dissipation (Max) 215W (Tc)
Temperature Range - Operating -55°C ~ 135°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Standard Package 600 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 579590-CMF20120D
Ultra Librarian 3D Model Ultra Librarian CMF20120D CAD Model

Description

The 579590-CMF20120D is a SiCFET (Silicon Carbide) transistor from Cree/Wolfspeed.

  • Series: Z-FET™
  • Channel Type: N-channel
  • Drain to Source Voltage (Vdss): 1200V
  • Continuous Drain Current (Id): 42A @ 25°C
  • Maximum On-Resistance (Rds On): 110mOhm @ 20A and 20V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 1mA
  • Power Dissipation: 215W
  • Package: Through-hole TO-247-3

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