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CY14B101NA-ZS25XI

Part No CY14B101NA-ZS25XI
Manufacturer Cypress Semiconductor Corp
Catalog SRAM
Description 1 Mbit (128K x 8/64K x 16) nvSRAM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Cypress Semiconductor Corp
Packaging Tray
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mb (64K x 16)
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Operating Supply Voltage 2.7 V ~ 3.6 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 44-TSOP (0.400", 10.16mm Width)
Manufacturer Package 44-TSOP II
Win Source Part Number 1163935-CY14B101NA-ZS25XI
Manufacturer Homepage www.cypress.com
Popularity Medium
Supply and Demand Status Limited
Family Name CY14B101NA
Introduction Date January 19, 2009
ECCN EAR99
Country of Origin China
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian CY14B101NA-ZS25XI CAD Model

Description

The CY14B101NA-ZS25XI is a 1Mb (64K x 16) Non-Volatile SRAM from Cypress Semiconductor Corp. It operates on a supply voltage range of 2.7 V to 3.6 V and has an access time of 25ns. This NVSRAM (Non-Volatile SRAM) has a parallel memory interface and comes in a 44-TSOP II package. The device is suitable for use in applications that require non-volatile memory such as data logging, industrial control systems, and gaming consoles. The CY14B101NA-ZS25XI has a write cycle time of 25ns and an estimated EOL date of 2023.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $31.1026 $62.2052
4+ $25.5201 $102.0804
7+ $24.7226 $173.0582
9+ $23.9251 $215.3259
11+ $23.1276 $254.4036
15+ $20.7351 $311.0265
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Availability: 70 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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