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CY14E256L-SZ25XI

Part No CY14E256L-SZ25XI
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description SRAM 256Kx8
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455603-CY14E256L-SZ25XI
Manufacturer Cypress Semiconductor Corp
Package Tube
Product Status Obsolete
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 256Kbit
Memory Organization 32K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 4.5 V ~ 5.5 V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
Ultra Librarian 3D Model Ultra Librarian CY14E256L-SZ25XI CAD Model

Description

The CY14E256L-SZ25XI is a part of Cypress Semiconductor's SRAM portfolio, specifically designed for applications requiring a blend of speed, reliability, and power efficiency. This device offers a memory size of 256K words by 8 bits and integrates SRAM's quick access capabilities with low power consumption features. With a focus on secure and reliable data storage, it is tailored for use in a wide array of electronic devices, from consumer electronics to industrial control systems. Its notable characteristics include high speed, low standby current, and robust endurance, ensuring data integrity and quick data retrieval. The CY14E256L-SZ25XI is particularly suited for applications such as energy management systems, portable devices, and other systems where efficient data access and reliability are paramount.

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Shipping Information

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