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S29GL512T10TFI030

Part No S29GL512T10TFI030
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 56TSOP  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100 ns 56-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 100 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Base Product Number S29GL512
Standard Package 182
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254761-S29GL512T10TFI030
Ultra Librarian 3D Model Ultra Librarian S29GL512T10TFI030 CAD Model

Description

The S29GL512T10TFI030 is a 512 Mbit (64 MB) flash memory device manufactured by Cypress Semiconductor Corp. It is a NOR flash memory, meaning that each memory cell can be individually accessed, allowing for fast read operations. This particular part is designed for high-performance applications requiring fast boot times, execute-in-place (XIP) capabilities, and reliable data storage.

Applications

  • Embedded systems requiring non-volatile storage
  • Networking equipment for storing boot code and configuration data
  • Industrial control systems
  • Automotive applications for storing firmware and calibration data
  • Aerospace applications

Features

  • 512 Mbit (64 MB) capacity
  • NOR flash architecture
  • 100 MHz clock speed
  • 10-year data retention
  • Sector erase and chip erase operations
  • Common Flash Interface (CFI) for easy system integration
  • Operating voltage: 2.7V to 3.6V
  • Operating temperature: -40°C to +85°C
  • Package: 56-ball FBGA

Benefits

  • Fast Read Performance: Enables quick boot-up times and efficient code execution directly from flash memory.
  • High Reliability: Ensures data integrity and long-term storage stability, critical for demanding applications.
  • Low Power Consumption: Optimized for energy-efficient operation, extending battery life in portable devices.
  • Compact Package: The FBGA package allows for high-density mounting on circuit boards, saving valuable space.
  • Wide Operating Temperature Range: Suitable for use in harsh environments, ensuring reliable operation across a wide range of temperatures.
  • Security features: Enhanced security options to protect the stored data and prevent unauthorized access.

Additional Details

The S29GL512T10TFI030 is designed to meet the stringent requirements of embedded systems. Its NOR flash architecture allows for random access reads, making it ideal for applications where code is executed directly from the flash memory. The device also supports sector erase and chip erase operations, providing flexibility in managing the memory contents. With its wide operating voltage and temperature range, the S29GL512T10TFI030 is suitable for use in a variety of industrial and automotive applications. It is Pb-free and RoHS compliant.

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Quantity Unit Price Ext. Price
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9+ $13.2000 $118.8000
14+ $12.7875 $179.0250
19+ $12.3751 $235.1269
25+ $11.9625 $299.0625
33+ $10.7250 $353.9250
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