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1N5711W

Part No 1N5711W
Manufacturer Diodes Incorporated
Catalog Hard To Find
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Win Source Part Number 1122010-1N5711W
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 1N5711W CAD Model

Description

Product Overview: 1N5711W - Schottky Barrier Diode

The 1N5711W from Diodes Incorporated is a high-performance Schottky barrier diode designed for a variety of applications that demand fast switching and low forward voltage drop. Packaged in a compact SOD-123 small outline package, this diode is optimized for space-constrained applications and is a perfect choice for high-frequency and portable systems.

This diode features a low forward voltage drop (typically 0.410V at IF = 1mA), which enhances overall system efficiency by reducing power losses during operation. The 1N5711W is capable of handling continuous forward current up to 15mA, making it suitable for medium-power applications. Its low reverse leakage current ensures minimal power waste when the diode is in the reverse-biased state.

With its fast switching capability, the 1N5711W can easily handle high-frequency operations, which is essential for applications such as RF circuits, high-speed logic systems, and power rectification. The diode's fast reverse recovery time contributes to reduced switching losses and improved performance in high-speed switching applications.

The 1N5711W is also characterized by its robustness, with a maximum operating junction temperature of 125°C, which allows for stable operation even under high-temperature conditions. This temperature resilience, combined with the diode's moisture sensitivity level 1 (MSL 1), ensures a reliable performance in various environmental conditions.

Key specifications of the 1N5711W include:

  • Low forward voltage drop
  • Fast switching speed
  • Continuous forward current: 15mA
  • Reverse leakage current: 2µA at VR = 20V
  • Operating junction temperature range: -65°C to +125°C

Typical applications for the 1N5711W Schottky barrier diode include:

  • Power supply design
  • DC-DC converters
  • Voltage clamping applications
  • Protection circuits
  • Logic systems and high-speed data lines

In conclusion, the 1N5711W from Diodes Incorporated is a versatile and efficient Schottky diode that offers designers a reliable solution for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,065+ $0.0543 $57.8295
2,565+ $0.0450 $115.4250
4,055+ $0.0427 $173.1485
5,560+ $0.0416 $231.2960
7,145+ $0.0404 $288.6580
9,680+ $0.0358 $346.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,300 pieces
MOQ: 1065 pcs
Order Increment : 1 pcs
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