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2DA1201Y-7

Part No 2DA1201Y-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 120V 0.8A SOT89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 120 @ 100mA, 5V
Maximum Power Dissipation 1.5W
Frequency - Transition 160MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89
Win Source Part Number 102054-2DA1201Y-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DA1201Y-7 CAD Model

Description

Product Overview: 2DA1201Y-7 - Diodes Incorporated

The 2DA1201Y-7 is a high-performance PNP bipolar transistor from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is designed to offer a blend of efficiency and reliability for a variety of electronic applications. It is commonly used in signal processing, power management, and other general-purpose amplification and switching tasks.

Key Features

  • Transistor Polarity: PNP - This indicates that the primary carriers in the device are holes, making it suitable for use in positive ground configurations.
  • Collector-Emitter Voltage (Vceo): 50V - This is the maximum voltage that can be applied across the collector-emitter terminals without causing damage to the transistor, providing a good margin for various circuit designs.
  • Collector Current (Ic): 150mA - The maximum current that can flow through the collector of the transistor, which makes it suitable for small to medium power applications.
  • Power Dissipation (Pd): 350mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature, ensuring stable performance during operation.
  • DC Current Gain (hFE): 120 to 560 - A measure of the transistor's amplification factor in direct current operation, indicating good gain characteristics over a wide range.
  • Operating Temperature Range: -55°C to +150°C - This wide range of operating temperatures ensures reliability and functionality in various environmental conditions.
  • Mounting Type: Surface Mount - The 2DA1201Y-7 comes in a SOT-23 package, which is ideal for space-saving designs and automated assembly processes.
  • RoHS Compliant: Yes - The product meets the Restriction of Hazardous Substances Directive, making it environmentally friendly and suitable for use in a wide range of markets.

Applications

The 2DA1201Y-7 transistor is versatile and can be used in several applications, including but not limited to:

  • Signal amplification circuits
  • Power management systems
  • Audio amplifiers
  • Switching applications
  • Driver stages in amplifiers

With its robust design and reliable performance, the 2DA1201Y-7 from Diodes Incorporated is an excellent choice for designers looking for a PNP transistor that delivers consistent results in a compact, surface-mount package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
490+ $0.1026 $50.2740
1,190+ $0.0842 $100.1980
1,840+ $0.0816 $150.1440
2,535+ $0.0790 $200.2650
3,280+ $0.0763 $250.2640
4,390+ $0.0684 $300.2760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 490 pcs
Order Increment : 1 pcs
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